ETH Zurich uses single ion to map 3D electromagnetic fields on chips

ETH Zurich researchers have announced a new technique that employs a single ion to sense electromagnetic fields above a surface, producing a three‑dimensional map of those fields. The method relies on the ion’s extreme sensitivity to local electromagnetic fluctuations, allowing it to probe the field distribution with nanometer‑scale resolution.

The development promises to enhance the design of quantum‑computing chips and quantum sensors. By accurately mapping stray fields that can decohere qubits or degrade sensor performance, engineers can identify and mitigate sources of noise in device fabrication. The ability to visualize these fields in three dimensions also aids in the precise placement of components and the optimization of shielding strategies.

If integrated into chip‑level testing, the technique could accelerate the creation of more reliable quantum hardware and improve the sensitivity of quantum‑based measurement devices. The research team plans to refine the method for routine use in semiconductor manufacturing and to explore its application to other quantum technologies.